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Patent Searching and Data


Title:
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A MULTILAYER WIRING
Document Type and Number:
WIPO Patent Application WO1998049718
Kind Code:
A3
Abstract:
A method of manufacturing a semiconductor device with a multilayer wiring (6, 11, 14) with aluminum conductor tracks (7, 12, 15) which are insulated from one another by insulating layers (9, 13). According to the method, an aluminum conductor track (20) provided on a surface (1) of a semiconductor body (2) is covered with a layer of insulating material (21), whereupon a contact window (22) with a wall (23) reaching down to the conductor track is formed in this insulating layer. A conductive intermediate layer (24, 28) and an aluminum layer (25, 29) are provided on this wall, whereupon a heat treatment is carried out such that aluminum (26) grows from the conductor track into the contact window. A conductive intermediate layer of titanium is provided on the wall of the contact window. A very thin, closed aluminum layer, which remains closed also during the heat treatment, can be formed on this titanium layer, which can be provided on the wall with a small thickness. The method is accordingly suitable for making semiconductor devices with multilayer wirings having contact windows of 0.5 mu m or smaller and having aspect ratios above 1.

Inventors:
WEBSTER MARIAN NELIA
DIRKS ALBERTUS GERHARDUS
Application Number:
PCT/IB1998/000368
Publication Date:
January 28, 1999
Filing Date:
March 16, 1998
Export Citation:
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Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
PHILIPS SVENSKA AB (NL)
International Classes:
H01L21/768; H01L23/522; H01L21/283; H01L23/532; (IPC1-7): H01L21/283; H01L23/532
Foreign References:
US5543357A1996-08-06
US5523626A1996-06-04
US5502334A1996-03-26
US5418187A1995-05-23
US5136362A1992-08-04
Other References:
ELECTRONICS AND COMMUNICATIONS IN JAPAN, Part 2, Volume 79, No. 2, 1996, NOBUKAZU ITO et al., "Influence of Contact Hole Profile and Underlayer Materials on Aluminum Filling Properties", pages 109-117.
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