Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/1997/003458
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor device in which crystal defects are generated in a semiconductor crystal by irradiating a semiconductor substrate (1) with a particle beam. In the preceding process of the irradiation process, the substrate (1) is heat-treated such that the temperature of the substrate (1) is raised rapidly in ten minutes to 550-850 �C and maintained for one second to 60 minutes. Crystal defects are generated in the crystal by irradiating the crystal with such a particle beam as an electron beam, the life time of carriers is shortened, and accordingly the switching speed is increased, not lowering the electric characteristics such as the current amplification factor. Thus a semiconductor device having both a high switching speed and good electric characteristics is fabricated.
Inventors:
SAKAMOTO KAZUHISA (JP)
Application Number:
PCT/JP1996/001906
Publication Date:
January 30, 1997
Filing Date:
July 09, 1996
Export Citation:
Assignee:
ROHM CO LTD (JP)
SAKAMOTO KAZUHISA (JP)
SAKAMOTO KAZUHISA (JP)
International Classes:
H01L29/73; H01L21/263; H01L21/331; H01L21/336; H01L29/30; H01L29/732; H01L29/74; H01L29/78; H01L29/861; (IPC1-7): H01L21/322
Foreign References:
| JPS5989460A | 1984-05-23 | |||
| JPS5481085A | 1979-06-28 |
Other References:
See also references of EP 0780891A4
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