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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2006/049130
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device wherein a silicon oxide film formed on a foundation is subjected to plasma nitridation using nitrogen which is activated by a plasma, and then subjected to thermal nitridation in a gaseous atmosphere including a compound containing a nitrogen atom, thereby forming a silicon oxynitride film having nitrogen concentration peaks near the surface of the silicon oxide film and near the interface of the silicon oxide film with the foundation.

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Inventors:
TERASAKI TADASHI (JP)
HIRANO AKITO (JP)
NAKAYAMA MASANORI (JP)
OGAWA UNRYU (JP)
Application Number:
PCT/JP2005/020013
Publication Date:
May 11, 2006
Filing Date:
October 31, 2005
Export Citation:
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Assignee:
HITACHI INT ELECTRIC INC (JP)
TERASAKI TADASHI (JP)
HIRANO AKITO (JP)
NAKAYAMA MASANORI (JP)
OGAWA UNRYU (JP)
International Classes:
H01L21/318; H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Foreign References:
JP2003133550A2003-05-09
JP2001093903A2001-04-06
Attorney, Agent or Firm:
Miyamoto, Haruhiko c/o KOYO INTERNATIONAL PATENT (AND LAW FIRM 5F., Nikko Kagurazaka Bldg., 18, Iwatoch, shinjuku-ku Tokyo 32, JP)
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