Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/064306
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device, wherein an insulating film (102) is formed on a semiconductor substrate (100); an opening portion (104) is formed in the insulating film (102); a conductive film (108) is formed on the insulating film (102) having the opening portion (104); the conductive film (108) is embedded in the opening portion (104) by removing the conductive film (108) on the insulating film (102) by a CMP method; and the surface of the insulating film (102) is treated with a silicon compound having Si-N or Si-Cl.
Inventors:
IMADA TADAHIRO (JP)
YOSHIKAWA KOUTA (JP)
YOSHIKAWA KOUTA (JP)
Application Number:
PCT/JP2008/071947
Publication Date:
June 10, 2010
Filing Date:
December 03, 2008
Export Citation:
Assignee:
FUJITSU LTD (JP)
IMADA TADAHIRO (JP)
YOSHIKAWA KOUTA (JP)
IMADA TADAHIRO (JP)
YOSHIKAWA KOUTA (JP)
International Classes:
H01L21/768
Foreign References:
| JP2008243901A | 2008-10-09 | |||
| JP2007073914A | 2007-03-22 | |||
| JP2006073800A | 2006-03-16 | |||
| JPH0766287A | 1995-03-10 | |||
| JP2008117903A | 2008-05-22 |
Attorney, Agent or Firm:
KITANO, Yoshihito (JP)
Kitano Yoshito (JP)
Kitano Yoshito (JP)
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