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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/068029
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device, wherein a deep hole is formed in a substrate using, as a mask, a photoresist film formed on the substrate. The method has: a disposing step wherein the substrate having the photoresist film formed thereon is disposed in an etching chamber, said photoresist film having an opening; a first etching step wherein the substrate disposed in the etching chamber is plasma-etched with a first mixed gas containing at least SiF4 and O2 using the photoresist film as a mask; and a second etching step wherein, sequentially after the first etching step, the substrate is plasma-etched with a second mixed gas containing at least SF6, O2 and HBr, and the hole is formed in the substrate.

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Inventors:
UDA SHUICHIRO (JP)
MARUYAMA KOJI (JP)
HIRAYAMA YUSUKE (JP)
Application Number:
PCT/JP2010/070464
Publication Date:
June 09, 2011
Filing Date:
November 17, 2010
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
UDA SHUICHIRO (JP)
MARUYAMA KOJI (JP)
HIRAYAMA YUSUKE (JP)
International Classes:
H01L21/3065
Foreign References:
JP2007220939A2007-08-30
JPH06163478A1994-06-10
JP2007103876A2007-04-19
JP2006156467A2006-06-15
JP2006093269A2006-04-06
Attorney, Agent or Firm:
ITOH, TADAHIKO (JP)
Tadahiko Ito (JP)
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