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Title:
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/102140
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device. Said method includes: a step in which a thin film is formed on a substrate; a resist-mask formation step in which a photoresist mask, in which an elliptical hole pattern is formed, is formed on the aforementioned thin film; a reduction step in which an insulating film is formed on the side walls of the elliptical hole pattern, thereby reducing the diameter of the hole in the hole pattern; and a step in which the thin film is etched using, as a mask, the photoresist layer and insulating film that form the aforementioned reduced-diameter elliptical hole pattern.

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Inventors:
OYAMA KENICHI (JP)
YABE KAZUO (JP)
YAEGASHI HIDETAMI (JP)
Application Number:
PCT/JP2011/000901
Publication Date:
August 25, 2011
Filing Date:
February 18, 2011
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
OYAMA KENICHI (JP)
YABE KAZUO (JP)
YAEGASHI HIDETAMI (JP)
International Classes:
H01L21/3065; H01L21/027
Foreign References:
JP2008300740A2008-12-11
JP2009044090A2009-02-26
JP2009094279A2009-04-30
JP2009099938A2009-05-07
Attorney, Agent or Firm:
SAKURA PATENT OFFICE, p. c. (JP)
Patent business corporation cherry tree international patent firm (JP)
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