Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/014717
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device (10) that has a cooling mechanism (61). Said method includes: a modified-region formation step in which laser light (L) is focused on a flat workpiece (1) formed from silicon, thereby forming a modified region (7) inside the workpiece (1) so as to extend along a modified-region formation plan line (5); an etching treatment step, after the modified-region formation step, in which the target object is anisotropically etched, said etching made to selectively progress along the modified region (7) forming, as a cooling mechanism (61), a fluid channel inside the workpiece (1) for circulating a cooling medium (61); and a functional-element formation step in which a functional element (15) is formed on one principal-surface side of the workpiece (1).
Inventors:
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
下井 英樹 (〒58 静岡県浜松市東区市野町１１２６番地の１ 浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
下井 英樹 (〒58 静岡県浜松市東区市野町１１２６番地の１ 浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
Application Number:
JP2011/066347
Publication Date:
February 02, 2012
Filing Date:
July 19, 2011
Export Citation:
Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
浜松ホトニクス株式会社 (〒58 静岡県浜松市東区市野町１１２６番地の１ Shizuoka, 〒4358558, JP)
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
浜松ホトニクス株式会社 (〒58 静岡県浜松市東区市野町１１２６番地の１ Shizuoka, 〒4358558, JP)
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
International Classes:
B23K26/38; B23K26/00; H01L23/473
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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Claims: