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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/084620
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor device, comprising: a step for preparing a substrate, made from silicon carbide, having n-type regions (14, 17) so as to include the principal surface; a step for forming p-type regions (15, 16) in a region including the principal surface; a step for heating the substrate in which the p-type regions (15, 16) are formed at a temperature of no less than 1250ºC, and thereby forming an oxide film (20) on the principal surface from the n-type regions (14, 17) across the p-type regions (15, 16); a step for removing the oxide film (20) so that at least a part of the principal surfaced is exposed; and a step for forming a Schottky electrode (50) on and in contact with the principal surface that is exposed by the removal of the oxide film (20).

Inventors:
WADA KEIJI (JP)
MASUDA TAKEYOSHI (JP)
Application Number:
JP2012/077858
Publication Date:
June 13, 2013
Filing Date:
October 29, 2012
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
International Classes:
H01L29/47; H01L21/329; H01L29/872
Domestic Patent References:
WO2007086196A12007-08-02
Foreign References:
JP2010067937A2010-03-25
JP2011044688A2011-03-03
JP2006253521A2006-09-21
JP2009253072A2009-10-29
JP2009212366A2009-09-17
JPH09246573A1997-09-19
Other References:
See also references of EP 2790225A4
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (Nakanoshima Central Tower, 2-7 Nakanoshima 2-chome, Kita-ku, Osaka-sh, Osaka 05, 〒5300005, JP)
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Claims: