Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/084620
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor device, comprising:
a step for preparing a substrate, made from silicon carbide, having n-type regions (14, 17) so as to include the principal surface; a step for forming p-type regions (15, 16) in a region including the principal surface; a step for heating the substrate in which the p-type regions (15, 16) are formed at a temperature of no less than 1250ºC, and thereby forming an oxide film (20) on the principal surface from the n-type regions (14, 17) across the p-type regions (15, 16); a step for removing the oxide film (20) so that at least a part of the principal surfaced is exposed; and a step for forming a Schottky electrode (50) on and in contact with the principal surface that is exposed by the removal of the oxide film (20).
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Inventors:
WADA KEIJI (JP)
MASUDA TAKEYOSHI (JP)
MASUDA TAKEYOSHI (JP)
Application Number:
PCT/JP2012/077858
Publication Date:
June 13, 2013
Filing Date:
October 29, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/47; H01L21/329; H01L29/872
Domestic Patent References:
| WO2007086196A1 | 2007-08-02 |
Foreign References:
| JP2010067937A | 2010-03-25 | |||
| JP2011044688A | 2011-03-03 | |||
| JP2006253521A | 2006-09-21 | |||
| JP2009253072A | 2009-10-29 | |||
| JP2009212366A | 2009-09-17 | |||
| JPH09246573A | 1997-09-19 |
Other References:
See also references of EP 2790225A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: