Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/161146
Kind Code:
A1
Abstract:
[Problem] To efficiently minimize contamination of a film formation surface immediately prior to film formation, without the use of a specialized cleaning device during the formation preprocess. [Solution] The method has: an ion plasma cleaning step for ion plasma cleaning through ion plasma irradiation of the back surface of an insulating substrate (2); and a DBR deposition film formation step for forming a DBR deposition film (7) on the back surface (irradiated surface) of the insulating substrate (2) having undergone ion plasma irradiation. In so doing, the DBR deposition film (7) is formed on the back surface of the insulating substrate (2) after organic matter, moisture, and other contaminant substances have been eliminated from the back surface of the insulating substrate (2) by ion plasma cleaning.
Inventors:
SASAKI HIROSHI (JP)
YOKOTA HIROSHI (JP)
YOKOTA HIROSHI (JP)
Application Number:
PCT/JP2013/000922
Publication Date:
October 31, 2013
Filing Date:
February 20, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L33/46; H01L21/205; H01L21/304; H01L21/3065; H01L21/312; H01L21/314; H01L21/316; H01L31/0232; H01S5/028
Foreign References:
| JP2000164969A | 2000-06-16 | |||
| JP2010056242A | 2010-03-11 | |||
| JP2008300562A | 2008-12-11 | |||
| JP2007165711A | 2007-06-28 |
Attorney, Agent or Firm:
YAMAMOTO, Shusaku et al. (JP)
Shusaku Yamamoto (JP)
Shusaku Yamamoto (JP)
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