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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/097714
Kind Code:
A1
Abstract:
A metal film that is formed of nickel or titanium is formed on a first surface of a substrate that is formed of silicon carbide. A metal silicide film is formed by causing a silicide reaction at the interface between the substrate and the metal film by irradiating the metal film with a pulse laser beam having a wavelength in the ultraviolet region. During the process for forming the metal silicide film, the pulse laser beam is irradiated under the conditions where the surface of the metal film does not melt.

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Inventors:
KAWASAKI TERUHISA (JP)
Application Number:
PCT/JP2013/077551
Publication Date:
June 26, 2014
Filing Date:
October 10, 2013
Export Citation:
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Assignee:
SUMITOMO HEAVY INDUSTRIES (JP)
International Classes:
H01L21/28; H01L21/329; H01L29/47; H01L29/872
Foreign References:
JP2010186991A2010-08-26
JP2007534143A2007-11-22
JPH10284436A1998-10-23
JP2012099598A2012-05-24
JPH08264468A1996-10-11
JP2012069798A2012-04-05
JP2012156390A2012-08-16
Attorney, Agent or Firm:
KITAYAMA, Mikio (JP)
Mikio Kiyama (JP)
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