METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2014/115494

Kind Code:

A1

Abstract:

A method of manufacturing a semiconductor device includes: forming a first trench in a first area of a drift layer that has a surface including the first area and a second area; growing a crystal of a p-type base layer on a surface of the drift layer after forming the first trench; and growing a crystal of an n-type source layer on a surface of the base layer. Material of the drift layer, the base layer, and the source layer are a wide-gap semiconductor.

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Inventors:

AOI SACHIKO (JP)
WATANABE YUKIHIKO (JP)
SUZUKI KATSUMI (JP)
MIZUNO SHOJI (JP)

Application Number:

PCT/JP2014/000060

Publication Date:

July 31, 2014

Filing Date:

January 09, 2014

Export Citation:

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Assignee:

TOYOTA CHUO KENKYUSHO KK (JP)
TOYOTA MOTOR CO LTD (JP)
DENSO CORP (JP)

International Classes:

H01L29/66

Domestic Patent References:

WO2012105613A1

2012-08-09

Foreign References:

EP1965436A2	2008-09-03
EP2276066A1	2011-01-19
JP2008118011A	2008-05-22
JP2010258387A	2010-11-11

Attorney, Agent or Firm:

KAI-U PATENT LAW FIRM (6-1 Ushijima-Cho, Nishi-ku, Nagoya-sh, Aichi 09, JP)

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