METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2014/199510

Kind Code:

A1

Abstract:

This method for manufacturing a semiconductor device comprises the steps of: forming a semiconductor layer upon a first main surface of a semiconductor substrate comprising a crystal having a wide bandgap; generating lattice defects on a second main surface side of the semiconductor substrate opposite from the first main surface; subsequent to the step of generating the lattice defects, irradiating the lower surface of the semiconductor substrate with laser light of a wavelength longer than the absorption edge wavelength, which is the wavelength of light of the lowest energy absorbed by the crystal; and subsequent to the step of irradiation, forming an electrode on the second main surface of the semiconductor substrate.

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Inventors:

FUKUDA YUSUKE (JP)

Application Number:

PCT/JP2013/066453

Publication Date:

December 18, 2014

Filing Date:

June 14, 2013

Export Citation:

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Assignee:

SHINDENGEN ELECTRIC MFG (JP)

International Classes:

H01L21/28; H01L21/268; H01L21/329; H01L29/47; H01L29/872

Foreign References:

JP2006041248A	2006-02-09
JP2012004185A	2012-01-05
JP2011219297A	2011-11-04
JP2004335815A	2004-11-25
JP2006041248A	2006-02-09

Other References: