Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/072210
Kind Code:
A1
Abstract:
The present invention provides a method for manufacturing a semiconductor device, which is capable of reducing the on-resistance. According to the present invention, a drift layer (12) is formed on a substrate (11). An ion implantation layer (13) is formed in the drift layer surface. In addition, an excess carbon region (31) is formed within the drift layer, and the drift layer is heated. In cases where an excess carbon region is formed, the excess carbon region is formed in a region that is positioned deeper than the interface between the ion implantation layer and the drift layer. In cases where the drift layer is heated, an activated layer (113) is formed by activating impurity ions in the ion implantation layer, and interstitial carbon atoms are diffused in the activated layer-side portion.
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Inventors:
HAMADA KENJI (JP)
IMAIZUMI MASAYUKI (JP)
IMAIZUMI MASAYUKI (JP)
Application Number:
PCT/JP2014/073058
Publication Date:
May 21, 2015
Filing Date:
September 02, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/329; H01L21/265; H01L21/322; H01L21/336; H01L29/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Foreign References:
| JP2008053667A | 2008-03-06 | |||
| JP2001094098A | 2001-04-06 | |||
| JPH11274487A | 1999-10-08 | |||
| JP2014146748A | 2014-08-14 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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