Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/167602
Kind Code:
A1
Abstract:
Provided is a high-yield method for manufacturing a semiconductor device, the method comprising a peeling step. In the present invention, a peeling method comprises a step in which a first material layer and a second material layer are laminated on a substrate, and a step in which the first material layer and the second material layer are separated. The second material layer is formed on the substrate with the first material layer interposed therebetween. The first material layer comprises a first compound layer, which is in contact with the second material layer, and a second compound layer, which is positioned to the substrate side of the first compound layer. The first compound layer has the highest oxygen content among the layers contained in the first material layer. The second compound layer has the highest nitrogen content among the layers contained in the first material layer. The second material layer contains resin. In the separating step, light is radiated onto the interface of the first material layer and the second material layer, or in the vicinity of the interface, whereby the first material layer and the second material layer are separated.
Inventors:
YASUMOTO SEIJI (JP)
KUMAKURA KAYO (JP)
SATO YUKA
IDOJIRI SATORU (JP)
ADACHI HIROKI (JP)
OKAZAKI KENICHI (JP)
KUMAKURA KAYO (JP)
SATO YUKA
IDOJIRI SATORU (JP)
ADACHI HIROKI (JP)
OKAZAKI KENICHI (JP)
Application Number:
PCT/IB2018/051417
Publication Date:
September 20, 2018
Filing Date:
March 06, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/02; H01L21/336; H01L27/12; H01L29/786
Domestic Patent References:
| WO2013172110A1 | 2013-11-21 |
Foreign References:
| JP2016115930A | 2016-06-23 | |||
| JP2014197664A | 2014-10-16 | |||
| JP2016005899A | 2016-01-14 | |||
| JP2014175463A | 2014-09-22 | |||
| JP2007012917A | 2007-01-18 |
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