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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/211568
Kind Code:
A1
Abstract:
A source electrode (5), a drain electrode (6), and a T-type gate electrode (9) are formed on GaN-based semiconductor layers (3, 4) to form a transistor. Insulating films (10, 11) for covering the T-type gate electrode (9) are formed. The characteristics of the transistor are evaluated. The film type, film thickness, or dielectric constant of the insulating films (10, 11) is adjusted in accordance with the result of the evaluation, thereby bringing the characteristics of the transistor closer to desired characteristics.

Inventors:
KOYAMA HIDETOSHI (JP)
Application Number:
PCT/JP2017/018240
Publication Date:
November 22, 2018
Filing Date:
May 15, 2017
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L21/02; H01L21/66; H01L29/41; H01L29/778; H01L29/812
Foreign References:
JP2016522982A2016-08-04
JPH0883813A1996-03-26
JP2014003222A2014-01-09
JP2002151465A2002-05-24
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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