Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/017034
Kind Code:
A1
Abstract:
This method comprises: a step (T1) in which acceptor ions are implanted from the back surface of a semiconductor substrate; a step (T2) in which hydrogen atoms are introduced into the semiconductor substrate by performing a wet treatment in which the semiconductor substrate is immersed in a hydrofluoric acid-containing chemical solution; a step (T3) in which, by irradiating the back surface of the semiconductor substrate with protons, hydrogen atoms are introduced into the semiconductor substrate and irradiation defects are formed; and a step (4) in which the semiconductor substrate is annealed so that hydrogen atoms react with irradiation defects to form hydrogen-related donors, and irradiation defects are reduced.
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Inventors:
KIYOI AKIRA (JP)
Application Number:
PCT/JP2018/016590
Publication Date:
January 24, 2019
Filing Date:
April 24, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/336; H01L21/329; H01L29/739; H01L29/78; H01L29/868
Domestic Patent References:
| WO2007055352A1 | 2007-05-18 | |||
| WO2013141181A1 | 2013-09-26 |
Foreign References:
| JP2013074181A | 2013-04-22 | |||
| JP2014123681A | 2014-07-03 | |||
| JP2006344977A | 2006-12-21 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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