Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/064906
Kind Code:
A1
Abstract:
In relation to techniques for manufacturing semiconductor devices having an ultrathin diaphragm, the present invention provides a manufacturing method that contributes to an improvement in manufacturing yield and has good workability.
This method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device having a diaphragm, and includes a step of forming an electronic circuit element on a top surface of a semiconductor wafer, and a step of forming the diaphragm by etch-removing the reverse surface side of the semiconductor wafer, characterized in that the step of forming the diaphragm includes: a sub-step of affixing onto the top surface of the semiconductor wafer a protective tape obtained by laminating an ultraviolet curing pressure-sensitive adhesive layer onto a resin tape; a sub-step of wet etching the semiconductor wafer from the reverse surface side thereof; a sub-step of irradiating the pressure-sensitive adhesive layer with ultraviolet light; and a sub-step of peeling off the protective tape at a temperature at least equal to the etching temperature of the wet etching and at most equal to the Vicat softening temperature of the resin tape.
Inventors:
TSUCHIMOCHI SHUTARO (JP)
TAMBA EISAKU (JP)
IKEO SATOSHI (JP)
TAMBA EISAKU (JP)
IKEO SATOSHI (JP)
Application Number:
PCT/JP2018/028793
Publication Date:
April 04, 2019
Filing Date:
August 01, 2018
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
B81C1/00; G01F1/692; H01L21/308
Foreign References:
| JP2008218919A | 2008-09-18 | |||
| JP2006013115A | 2006-01-12 | |||
| JP2006303410A | 2006-11-02 | |||
| JP2008135662A | 2008-06-12 | |||
| JP2011124480A | 2011-06-23 | |||
| JP2010067782A | 2010-03-25 |
Attorney, Agent or Firm:
TODA Yuji (JP)
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