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Patent Searching and Data


Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/198167
Kind Code:
A1
Abstract:
This semiconductor device includes: a semiconductor substrate that comprises silicon carbide; a first conductivity type drift layer formed on one major surface of the semiconductor substrate; a second conductivity type well region formed on the drift layer; a first conductivity type source region formed on the well region; an insulating film formed on the drift layer; a contact metal film that is formed on the insulating film and contacts both the source region and the well region through an opening formed on the insulating film; and a source electrode film formed so as to contact the contact metal film. The contact metal film may include titanium nitride.

Inventors:
TAKAHASHI Teppei (10-13, Minami-cho, Hanno-sh, Saitama 85, 〒3578585, JP)
INOUE Tetsuto (10-13, Minami-cho, Hanno-sh, Saitama 85, 〒3578585, JP)
SUGAI Akihiko (10-13, Minami-cho, Hanno-sh, Saitama 85, 〒3578585, JP)
MOCHIZUKI Takashi (10-13, Minami-cho, Hanno-sh, Saitama 85, 〒3578585, JP)
NAKAMURA Shunichi (10-13, Minami-cho, Hanno-sh, Saitama 85, 〒3578585, JP)
Application Number:
JP2018/015165
Publication Date:
October 17, 2019
Filing Date:
April 11, 2018
Export Citation:
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Assignee:
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. (2-1 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
International Classes:
H01L29/78; H01L29/12
Domestic Patent References:
WO2015198468A12015-12-30
Foreign References:
JPH0864802A1996-03-08
JP2017147471A2017-08-24
JP2017059720A2017-03-23
JP2017157851A2017-09-07
JP2018046162A2018-03-22
JP2014127709A2014-07-07
Attorney, Agent or Firm:
OHNO Seiji et al. (OHNO & PARTNERS, Marunouchi Kitaguchi Building 21F 6-5, Marunouchi 1-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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