Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/208578
Kind Code:
A1
Abstract:
A recessed portion (14, 23) is formed in at least one of a plurality of silicon substrates (11, 13, 21). Further, in at least one of the plurality of silicon substrates, a silicon dioxide film (12, 22) in which a groove portion (17, 28) extending to the outer periphery of the plurality of silicon substrates while surrounding a forming planned region of a space (30) is formed in a part separated from the forming planned region. Furthermore, the at last one silicon substrate on which the silicon dioxide film has been formed, among the plurality of silicon substrates, and one other of the plurality of silicon substrates are joined by means of a direct junction with the silicon dioxide film interposed therebetween, in such a way as to cover the groove portion, to form a gas discharge passage (40) and to form a stacked structure comprising the plurality of silicon substrates and the silicon dioxide film, and a space is formed inside the stacked structure by means of the recessed portion. Further, gas inside the space is discharged to the outside of the stacked structure through the gas discharge passage by means of heat treatment.
Inventors:
SUZUKI MEGUMI (JP)
YAMAMOTO YASUO (JP)
AKASHI TERUHISA (JP)
YAMAMOTO YASUO (JP)
AKASHI TERUHISA (JP)
Application Number:
PCT/JP2019/017268
Publication Date:
October 31, 2019
Filing Date:
April 23, 2019
Export Citation:
Assignee:
DENSO CORP (JP)
TOYOTA CHUO KENKYUSHO KK (JP)
TOYOTA CHUO KENKYUSHO KK (JP)
International Classes:
G01P15/08; B81C1/00; G01C19/5783; H01L29/84
Foreign References:
| JP2012141160A | 2012-07-26 | |||
| JP2012049335A | 2012-03-08 | |||
| US20060179951A1 | 2006-08-17 | |||
| US6499354B1 | 2002-12-31 | |||
| JP2000133817A | 2000-05-12 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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