Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/216085
Kind Code:
A1
Abstract:
In this method for manufacturing a semiconductor device, firstly, a surface element structure of a semiconductor element is formed on one main surface (10a) side of a first conductive-type semiconductor substrate (10). Then, a first protective film (17) is formed on the other main surface (10b) side of the semiconductor substrate (10). Then, ions are implanted into the semiconductor substrate (10) from the other main surface (10b) side on which the first protective film (17) is formed. Then, the first protective film (17) is removed. After forming the first protective film (17), a second protective film (16) may be formed on the main surface (10a) side of the semiconductor substrate (10).
Inventors:
KODAMA NAOKO (JP)
Application Number:
PCT/JP2019/015367
Publication Date:
November 14, 2019
Filing Date:
April 08, 2019
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/322; H01L21/265; H01L21/266; H01L21/336; H01L29/12; H01L29/739; H01L29/78; H01L29/861; H01L29/868
Foreign References:
| JP2017092256A | 2017-05-25 | |||
| JP2011108986A | 2011-06-02 | |||
| JP2006324585A | 2006-11-30 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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