Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/240332
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a high-productivity semiconductor device. The present invention includes: a step for depositing a first insulator, a second insulator, and a third insulator in order by using a multi-chamber device; a step for depositing a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in order by using the multi-chamber device; a step for depositing a conductive film; a step for forming a first oxide, a second oxide, an oxide layer, and a conductive layer in an island shape by processing the first oxide film, the second oxide film, the third oxide film, and the conductive film; a step for depositing a sixth insulator and an insulating film in order by using the multi-chamber device; a step for flattening the insulating film; a step for forming an opening in the insulating film and the sixth insulator such that the second oxide is exposed from said opening; a step for forming a seventh insulator and a first conductor; and a step for depositing an eighth insulator and a ninth insulator in order by using the multi-chamber device.
Inventors:
YAMAZAKI SHUNPEI (JP)
HIROSE TAKASHI (JP)
SHIBAZAKI ATSUSHI (JP)
JINBO YASUHIRO (JP)
HIROSE TAKASHI (JP)
SHIBAZAKI ATSUSHI (JP)
JINBO YASUHIRO (JP)
Application Number:
PCT/IB2020/054666
Publication Date:
December 03, 2020
Filing Date:
May 18, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; H01L29/786; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108
Foreign References:
| JP2016219761A | 2016-12-22 | |||
| JP2017034051A | 2017-02-09 | |||
| JP2017085082A | 2017-05-18 | |||
| JP2017147445A | 2017-08-24 |
Download PDF: