Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/223657
Kind Code:
A1
Abstract:
This method for manufacturing semiconductor device includes: forming an oxide semiconductor layer on a substrate through the sputtering method; placing the substrate having the oxide semiconductor layer formed thereon in a heating furnace with a heating medium maintained at a set temperature in advance to apply first heating processing to the oxide semiconductor layer; forming a gate insulation layer on the oxide semiconductor layer after the first heating processing; and forming a gate electrode on the gate insulation layer. During the placement of the substrate in the heating furnace, a temperature decrease of the heating medium is suppressed within 15% of the set temperature.
Inventors:
WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
Application Number:
PCT/JP2023/010846
Publication Date:
November 23, 2023
Filing Date:
March 20, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L21/336; H01L21/20; H01L21/477; H01L29/786
Foreign References:
| JP2011122239A | 2011-06-23 | |||
| JP2013065840A | 2013-04-11 | |||
| JPH0922878A | 1997-01-21 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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