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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT BODY
Document Type and Number:
WIPO Patent Application WO/2020/262561
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor element according to the present disclosure includes: an element-layer forming step for forming a semiconductor element layer on a first surface of a ground substrate; a first-support-substrate preparation step for positioning a first support substrate that has a third surface and that has a bonding material located on the third surface such that the third surface faces the first surface; a pressing step for pressing the bonding material into the gap between the ground substrate and the semiconductor element layer; and a delamination step for delaminating the first support substrate, the bonding material, and the semiconductor element layer from the ground substrate.

Inventors:
WATANABE KEIICHIRO (JP)
Application Number:
PCT/JP2020/025108
Publication Date:
December 30, 2020
Filing Date:
June 25, 2020
Export Citation:
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Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/02; H01L21/20; H01S5/02
Foreign References:
JP2007096114A2007-04-12
JP2013251304A2013-12-12
JP2004281739A2004-10-07
JP2004273596A2004-09-30
JP2004096018A2004-03-25
Attorney, Agent or Firm:
SAIKYO, Keiichiro (JP)
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