Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/070986
Kind Code:
A1
Abstract:
This method for manufacturing a semiconductor element includes: a bonding layer forming step for forming a bonding layer 102 that bonds a semiconductor thin film with a weaker force than a covalent bond in a bonding layer region which is a portion of a first substrate 101; a thin film forming step for forming a semiconductor thin film 103 in the bonding layer region and a bonding layer absent region constituting the portion of the first substrate 101 other than the bonding layer region; a separating step for separating the semiconductor thin film 103 from the first substrate 101 by bonding an organic layer of a pickup substrate 140 different from the first substrate 101 to the semiconductor thin film 103; an attachment removing step for removing the bonding layer 102 attached to a release surface of the semiconductor thin film 103 after being separated from the first substrate 101; and a connecting step for connecting the semiconductor thin film 103 after removal of a bonding layer 122 to a second substrate 201 that is different from the first substrate 101.
Inventors:
OGIHARA MITSUHIKO (JP)
Application Number:
PCT/JP2019/032217
Publication Date:
April 09, 2020
Filing Date:
August 19, 2019
Export Citation:
Assignee:
FILNEX INC (JP)
International Classes:
H01L21/02; H01L21/20
Foreign References:
| JP2015015321A | 2015-01-22 | |||
| JP2011009268A | 2011-01-13 | |||
| JP2010258352A | 2010-11-11 | |||
| US20140220764A1 | 2014-08-07 |
Attorney, Agent or Firm:
IZUMI Michihiro (JP)
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