Title:
METHOD OF MANUFACTURING SEMICONDUCTOR EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/167430
Kind Code:
A1
Abstract:
Provided is a method of manufacturing a semiconductor epitaxial wafer enabling manufacture of a semiconductor epitaxial wafer with which it is possible to obtain a sufficient passivation effect due to hydrogen in an epitaxial layer, even when used for a low-temperature device forming process. The method of manufacturing a semiconductor epitaxial wafer 100 according to the present invention comprises: a first step of irradiating a surface 10A of a semiconductor wafer 10 with a cluster ion 12 including, as constituent elements, carbon, phosphor, and hydrogen, and of forming on an upper layer portion of the semiconductor wafer a modified layer 14 in which the constituent elements of the cluster ion have formed a solid solution; and a second step of forming an epitaxial layer 18 on the modified layer 14 of the semiconductor wafer. When the numbers of atoms of carbon, phosphor, and hydrogen in the cluster ion 12 are denoted CxPyHz (where x, y, and z are integers of one or more), the ratio y/x of the number y of phosphor atoms to the number x of carbon atoms is not less than 0.5 and not more than 2.0.
More Like This:
| JPH0350720 | POLYCRYSTAL SILICON RECRYSTALLIZATION |
| JPS6489512 | MANUFACTURE OF SINGLE CRYSTAL SILICON FILM |
Inventors:
OKUYAMA RYOSUKE (JP)
Application Number:
PCT/JP2019/000239
Publication Date:
September 06, 2019
Filing Date:
January 08, 2019
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/20; H01L21/205; H01L21/265; H01L21/322
Foreign References:
| JP2014099482A | 2014-05-29 | |||
| JP2012505550A | 2012-03-01 | |||
| JP2009540535A | 2009-11-19 | |||
| JP2016051729A | 2016-04-11 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
Download PDF: