Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2018/105015
Kind Code:
A1
Abstract:
The semiconductor laser according to the present invention is formed by sequentially laminating a lower cladding layer (2), an active layer (4), and an upper cladding layer (6) on a semiconductor substrate (1). At least two window regions (13, 14) having different mixed crystal ratios in the active layer (4) are formed by performing an impurity diffusion step at least two times with respect to an end surface portion of the semiconductor laser.
Inventors:
KURAMOTO KYOSUKE (JP)
KUSUNOKI MASATSUGU (JP)
KUSUNOKI MASATSUGU (JP)
Application Number:
PCT/JP2016/086101
Publication Date:
June 14, 2018
Filing Date:
December 05, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/16
Foreign References:
| JP2014003229A | 2014-01-09 | |||
| JP2010278131A | 2010-12-09 | |||
| JP2000183379A | 2000-06-30 | |||
| JP2008263250A | 2008-10-30 | |||
| JPH1168249A | 1999-03-09 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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