Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/050410
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a semiconductor light emitting element, by which a semiconductor light emitting element having excellent light extraction efficiency can be manufactured at high yield. The method for manufacturing a semiconductor light emitting element has: a polishing step of polishing a surface to be polished (103) on a substrate (11) of a wafer, which has the substrate (11) and a III nitride semiconductor layer composed of a multilayer structure of a III nitride semiconductor formed on the substrate (11); a polishing step of adjusting the surface roughness (Ra) of the surface (103) of the substrate (11) polished in the polishing step to be 3 nm to 25 nm; a laser processing step of arranging processed modified sections (41, 42) inside the substrate (11), by applying a laser beam (L2) along a cut-planned line provided for dividing the substrate (11) from the side of the surface (103) of the substrate (11) having the surface roughness (Ra) thereof adjusted in the polishing step; a dividing step of dividing the substrate (11) provided with the processed modified sections (41, 42) in the laser processing step, along the processed modified sections (41, 42) and the cut-planned line.
More Like This:
Inventors:
SUGANO SUSUMU (JP)
Application Number:
PCT/JP2009/068250
Publication Date:
May 06, 2010
Filing Date:
October 23, 2009
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
SUGANO SUSUMU (JP)
SUGANO SUSUMU (JP)
International Classes:
H01L33/32
Foreign References:
| JP2008251753A | 2008-10-16 | |||
| JP2003218065A | 2003-07-31 | |||
| JP2008117799A | 2008-05-22 | |||
| JP2006245380A | 2006-09-14 | |||
| JP2003318441A | 2003-11-07 | |||
| JP2008106316A | 2008-05-08 | |||
| JP2002053398A | 2002-02-19 |
Attorney, Agent or Firm:
FURUBE, Jiro et al. (JP)
Jiro Furube (JP)
Jiro Furube (JP)
Download PDF: