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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/026953
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor light emitting device includes: a first step for forming a semiconductor layer (100) including a light emitting layer (40) on a first surface (P1) of a substrate (20); a second step for forming, in the semiconductor layer (100), a first groove (T1) extending in a first direction in the in-plane direction of the substrate and a second groove (T2) arranged inside the first groove (T1) to be parallel to the first groove (T1); a third step for forming a third groove (T3) parallel to the first groove (T1) in a second surface (P2) located on the opposite side of the substrate (20) with respect to the first surface (P1); and a fourth step for forming a semiconductor light emitting device by splitting the substrate (20), wherein, in the fourth step, the termination end of at least one split side surface of the semiconductor light emitting device is within the second groove (T2), the first groove (T1) has a first width (W1), the second groove (T2) has a second width (W2), and the second width (W2) is narrower than the first width (W1).

Inventors:
SATO, Hitoshi
YAMADA, Kazuya
NAGAI, Hiroki
Application Number:
JP2018/028841
Publication Date:
February 07, 2019
Filing Date:
August 01, 2018
Export Citation:
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Assignee:
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (1-61, Shiromi 2-chome Chuo-ku, Osaka-sh, Osaka 07, 〒5406207, JP)
International Classes:
H01S5/02; H01S5/028
Attorney, Agent or Firm:
NII, Hiromori et al. (6F Tanaka Ito Pia Shin-Osaka Bldg., 3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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