Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR MARK, AND SEMICONDUCTOR MARK
Document Type and Number:
WIPO Patent Application WO/2022/147997
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors. Disclosed are a method for manufacturing a semiconductor mark, and a semiconductor mark. The method for manufacturing a semiconductor mark comprises: providing a pattern after a circumferential edge has been subjected to OPC; cropping the pattern to obtain a plurality of separate alignment segments; and splicing the plurality of alignment segments to form a semiconductor mark, the circumferential edge of which has been subjected to OPC. A pattern after a circumferential edge has been subjected to OPC, is cropped and then splicing is performed, so as to obtain a semiconductor mark, the circumferential edge of which has been subjected to OPC, such that the semiconductor mark, the circumferential edge of which has been subjected to OPC, can be formed once a plurality of alignment segments are spliced, and the time needed for performing OPC after the semiconductor mark is formed is reduced, thereby improving the efficiency of manufacturing the semiconductor mark.
Inventors:
SHAN CHUANG (CN)
Application Number:
PCT/CN2021/106577
Publication Date:
July 14, 2022
Filing Date:
July 15, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/48; H01L23/544
Foreign References:
| CN112864023A | 2021-05-28 | |||
| CN101320206A | 2008-12-10 | |||
| CN102063010A | 2011-05-18 | |||
| US20190131359A1 | 2019-05-02 | |||
| CN111458974A | 2020-07-28 | |||
| CN103365071A | 2013-10-23 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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