Title:
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, MANUFACTURING APPARATUS THEREFOR, AND EPITAXIAL GROWTH METHOD
Document Type and Number:
WIPO Patent Application WO/2020/218483
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a novel method and apparatus of manufacturing a semiconductor substrate. Achieved are a method of manufacturing a semiconductor substrate and a manufacturing apparatus therefor, the method comprising: an installation step for installing a plurality of objects to be processed having semiconductor substrates in a stack; and a heating step for heating each of the plurality of objects to be processed such that a temperature gradient is formed in the thickness direction of the semiconductor substrate.
Inventors:
KANEKO TADAAKI (JP)
Application Number:
PCT/JP2020/017643
Publication Date:
October 29, 2020
Filing Date:
April 24, 2020
Export Citation:
Assignee:
KWANSEI GAKUIN EDUCATIONAL FOUND (JP)
TOYOTA TSUSHO CORP (JP)
TOYOTA TSUSHO CORP (JP)
International Classes:
C30B23/06; C30B29/36; H01L21/20; H01L21/203
Domestic Patent References:
| WO2017188381A1 | 2017-11-02 |
Foreign References:
| JPH10270369A | 1998-10-09 | |||
| JPH0193130A | 1989-04-12 | |||
| JP2018107383A | 2018-07-05 | |||
| JPS49134595A | 1974-12-25 | |||
| JP2017188381A | 2017-10-12 |
Attorney, Agent or Firm:
TSUJITA, Tomoko (JP)
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