Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING N-TYPE DIFFUSION LAYER, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/010095
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor substrate having an n-type diffusion layer including a step for heat-treating a semiconductor substrate such that the gas flow rate is 3-60 mm/sec in linear speed, at least a part of the semiconductor substrate being imparted with an n-type-diffusion-layer-forming composition that contains a dispersion medium and glass particles containing a donor element.
Inventors:
IWAMURO MITSUNORI (JP)
NOJIRI TAKESHI (JP)
KURATA YASUSHI (JP)
ASHIZAWA TORANOSUKE (JP)
ORITA AKIHIRO (JP)
SHIMIZU MARI (JP)
SATO TETSUYA (JP)
SATOU EIICHI (JP)
NOJIRI TAKESHI (JP)
KURATA YASUSHI (JP)
ASHIZAWA TORANOSUKE (JP)
ORITA AKIHIRO (JP)
SHIMIZU MARI (JP)
SATO TETSUYA (JP)
SATOU EIICHI (JP)
Application Number:
PCT/JP2015/070322
Publication Date:
January 21, 2016
Filing Date:
July 15, 2015
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD (JP)
International Classes:
H01L21/225; H01L31/068; H01L31/18
Domestic Patent References:
| WO2013005738A1 | 2013-01-10 |
Foreign References:
| JP2013026467A | 2013-02-04 | |||
| JP2013026579A | 2013-02-04 | |||
| JP2014086587A | 2014-05-12 | |||
| JP2013026344A | 2013-02-04 |
Attorney, Agent or Firm:
Taiyo, Nakajima & Kato (JP)
Patent business corporation solar international patent firm (JP)
Patent business corporation solar international patent firm (JP)
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