Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/140229
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor substrate according to the present invention is provided with: a hydrogen-layer formation step for forming a hydrogen layer 3 on a first substrate 2 composed of a single crystal of a first semiconductor material; a bonding step for bonding the first substrate and a temporary substrate 4; a first separation step for separating the first substrate at the hydrogen layer serving as a boundary and leaving a separated surface side of the first substrate as a first thin film layer 22 on the temporary substrate; a support-layer formation step for forming a support layer 6 composed of a second semiconductor material on the temporary substrate having the first thin film layer left thereon; a second separation step for removing the temporary substrate; and a cutting-off step for cutting off a peripheral section 72 of the substrate.
More Like This:
Inventors:
KATO MITSUHARU (JP)
USAMI TAMOTSU (JP)
SHIMADA TADASHI (JP)
USAMI TAMOTSU (JP)
SHIMADA TADASHI (JP)
Application Number:
PCT/JP2016/056300
Publication Date:
September 09, 2016
Filing Date:
March 01, 2016
Export Citation:
Assignee:
MTEC CORP (JP)
International Classes:
H01L21/02; B23K20/00; H01L21/304; B23K26/36; B23K26/57
Foreign References:
| JP2015015401A | 2015-01-22 | |||
| JP2014075565A | 2014-04-24 | |||
| JP2002280531A | 2002-09-27 | |||
| JP2014059863A | 2014-04-03 |
Attorney, Agent or Firm:
KOJIMA SEIJI (JP)
Seiji Kojima (JP)
Seiji Kojima (JP)
Download PDF: