Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR SUPER-JUNCTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/223354
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor super-junction device, comprising: forming, on an n-type epitaxial layer (20), a hard mask layer having at least one opening; etching the n-type epitaxial layer by using the hard mask layer as a mask, and forming a first trench in the n-type epitaxial layer, the width of the first trench being greater than the width of the corresponding opening, the first trench comprising a p-type column region located below the corresponding opening and gate regions located on both sides of the p-type column region; forming a first insulating layer (21) on the surface of the first trench, depositing a first conductive layer and etching back to form a gate (22) in the gate region of the first trench; forming an insulating side wall (33) on an exposed sidewall of the gate, and forming a second trench in the n-type epitaxial layer by using the hard mask layer as the mask; and forming p-type columns (23) in the p-type column region and the second trench.
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Inventors:
LIU WEI (CN)
LIU LEI (CN)
WANG RUI (CN)
GONG YI (CN)
LIU LEI (CN)
WANG RUI (CN)
GONG YI (CN)
Application Number:
PCT/CN2020/116683
Publication Date:
November 11, 2021
Filing Date:
September 22, 2020
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L21/336; H01L29/78
Domestic Patent References:
| WO2020084736A1 | 2020-04-30 |
Foreign References:
| CN108767000A | 2018-11-06 | |||
| CN109830532A | 2019-05-31 | |||
| DE102004009323A1 | 2005-09-22 | |||
| US5998836A | 1999-12-07 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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