METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2010/101016

A1

An epitaxial layer, wherein a bunching step height and a crystal defect due to a migration failure of a reactive species on a terrace are both reduced, is formed on a SiC semiconductor substrate having an off-angle of 5 degrees or less. An epitaxial layer of the first layer at a growing temperature (T1) is formed within a period from a time (t1) to a time (t2) on the surface of the SiC semiconductor substrate having the off-angle of 5 degrees or less and in contact with the surface. The temperature of a reacting furnace is reduced from the growing temperature (T1) to a growing temperature (T2), and an epitaxial layer of the second layer is epitaxially grown at the growing temperature (T2) (