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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SINTERED COMPACT JIG AND SILICON CARBIDE SINTERED COMPACT JIG MANUFACTURED BY THE METHOD
Document Type and Number:
WIPO Patent Application WO/2003/076363
Kind Code:
A1
Abstract:
A method for manufacturing a silicon carbide sintered compact jig, characterized in that it has (a) a step of dispersing or dissolving a SiC powder or an organic material as a C source into a solvent, to prepare a mixed powder slurry; (b) a step of pouring the mixed powder slurry into a mold and drying it, to form a green compact, (c) a step of subjecting the green compact to calcination at 1500 to 2000&ring C under vacuum or in an inert gas atmosphere, to provide a calcinated compact, (d) a step of pre-forming the calcinated compact to prepare a pre-formed article, (e) a step of impregnating the pre-formed article with molten metallic Si by utilizing the capillary action, to thereby react the free carbon in the pre-formed article with the Si absorbed in the pre-formed article, to form a silicon carbide sintered compact, and (f) subjecting the silicon carbide sintered compact to precise working, to manufacture the silicon carbide sintered compact jig; and a silicon carbide sintered compact jig manufactured by the method. The method allows the saving of the time required for manufacturing a silicon carbide sintered compact jig.

Inventors:
MOTOYAMA TSUYOSHI (JP)
TAGUCHI JIN-ICHI (JP)
ODAKA FUMIO (JP)
SHINOGAYA TOSHIKAZU (JP)
Application Number:
PCT/JP2003/002720
Publication Date:
September 18, 2003
Filing Date:
March 07, 2003
Export Citation:
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Assignee:
BRIDGESTONE CORP (JP)
MOTOYAMA TSUYOSHI (JP)
TAGUCHI JIN-ICHI (JP)
ODAKA FUMIO (JP)
SHINOGAYA TOSHIKAZU (JP)
International Classes:
C04B35/573; H01L21/673; (IPC1-7): C04B35/56; H01L21/205
Foreign References:
JP2000349137A2000-12-15
US6387834B12002-05-14
EP0357491A21990-03-07
EP0885859A21998-12-23
JP2001257056A2001-09-21
Other References:
See also references of EP 1484297A4
Attorney, Agent or Firm:
Miyoshi, Hidekazu (Toranomon Daiichi Building 2-3, Toranomon 1-chom, Minato-ku Tokyo, JP)
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