Title:
METHOD FOR MANUFACTURING SILICON NITRIDE THIN FILM USING PLASMA ATOMIC LAYER DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2017/026676
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality Si-N bond under the condition of lower power and film-forming temperature, by applying an amino silane derivative having a specific Si-N bond to a plasma atomic layer deposition method.
Inventors:
JANG SE JIN (KR)
LEE SANG-DO (KR)
CHO SUNG WOO (KR)
KIM SUNG GI (KR)
YANG BYEONG-IL (KR)
SEOK JANG HYEON (KR)
LEE SANG ICK (KR)
KIM MYONG WOON (KR)
LEE SANG-DO (KR)
CHO SUNG WOO (KR)
KIM SUNG GI (KR)
YANG BYEONG-IL (KR)
SEOK JANG HYEON (KR)
LEE SANG ICK (KR)
KIM MYONG WOON (KR)
Application Number:
PCT/KR2016/007662
Publication Date:
February 16, 2017
Filing Date:
July 14, 2016
Export Citation:
Assignee:
DNF CO LTD (KR)
International Classes:
C23C16/455; C23C16/02; C23C16/34; C23C16/50; C23C16/513
Foreign References:
| KR101350544B1 | 2014-01-10 | |||
| US20140273530A1 | 2014-09-18 | |||
| KR20110007056A | 2011-01-21 | |||
| KR20130016171A | 2013-02-14 | |||
| KR20130057409A | 2013-05-31 |
Attorney, Agent or Firm:
PLUS INTERNATIONAL IP LAW FIRM (KR)
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