METHOD FOR MANUFACTURING SINGLE-CRYSTAL SEMICONDUCTOR LAYER, STRUCTURE COMPRISING SINGLE-CRYSTAL SEMICONDUCTOR LAYER, AND SEMICONDUCTOR DEVICE COMPRISING STRUCTURE

WIPO Patent Application WO/2020/122516

A1

Provided are a method for manufacturing a single-crystal semiconductor layer, a structure comprising the single-crystal semiconductor layer, and a semiconductor device comprising the structure. The method for manufacturing a single-crystal semiconductor layer may comprise carrying out, multiple times, a unit cycle which comprises: a metal precursor pressure-dosing step for supplying a metal precursor on a single-crystal substrate in a state where an outlet of a chamber having the single-crystal substrate inputted therein is closed, thereby increasing the reaction pressure in the chamber, and thus enabling the metal precursor to be adsorbed on the surface of the substrate; a metal precursor purging step for purging the chamber after the metal precursor pressure-dosing step; a reaction gas supplying step for, after the metal precursor purging step, supplying reaction gas inside the chamber so as to enable the reaction gas to react with the metal precursor adsorbed on the substrate; and a reaction gas purging step for purging the chamber after the reaction gas supplying step. As a result, a single-crystal semiconductor layer may be formed on the single-crystal substrate.

SUNG MYUNG MO (KR)
LEE LYNN (KR)
JUNG JIN WON (KR)
KIM JONG CHAN (KR)

PCT/KR2019/017268

June 18, 2020

December 09, 2019

Click for automatic bibliography generation  

UNIV HANYANG IND UNIV COOP FOUND (KR)

H01L21/02

KR20170123752A	2017-11-09
KR20040108771A	2004-12-24
KR20150122433A	2015-11-02
KR20080064259A	2008-07-09
KR100811281B1	2008-03-07

E-SANG PATENT & TRADEMARK LAW FIRM (KR)

View/Download PDF      PDF Help

Previous Patent: TENNIS PRACTICE DEVICE

Next Patent: LAUNDRY MACHINE HAVING INDUCTION HEATER AND CONTROL METHOD OF THE SAME