Title:
METHOD FOR MANUFACTURING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/044142
Kind Code:
A1
Abstract:
Provided is a technique relating to a method for manufacturing a substrate. This method for manufacturing a substrate includes an irradiation step of irradiating the inside of a gallium nitride (GaN) ingot with laser light from a direction substantially perpendicular to the surface of the ingot to form a modified layer which has gallium deposited thereon and is substantially parallel to the ingot surface. The method for manufacturing a substrate includes a separation step of separating the ingots from each other along the boundary consisting of the position at which the modified layer was formed by dissolving the modified layer.
Inventors:
TANAKA ATSUSHI (JP)
KAWAGUCHI DAISUKE (JP)
KAWAGUCHI DAISUKE (JP)
Application Number:
PCT/JP2018/024353
Publication Date:
March 07, 2019
Filing Date:
June 27, 2018
Export Citation:
Assignee:
UNIV NAGOYA NAT UNIV CORP (JP)
HAMAMATSU PHOTONICS KK (JP)
HAMAMATSU PHOTONICS KK (JP)
International Classes:
C30B29/38; B23K26/53; B28D5/04; C30B33/02; H01L21/304
Foreign References:
| JP2016146447A | 2016-08-12 | |||
| JP2016043558A | 2016-04-04 | |||
| JP2017057103A | 2017-03-23 | |||
| JP2017168569A | 2017-09-21 | |||
| JP2017057103A | 2017-03-23 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
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