METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE DEVICE COMPOSITE SUBSTRATE, AND SURFACE ACOUSTIC WAVE DEVICE USING COMPOSITE SUBSTRATE

WIPO Patent Application WO/2018/016314

A1

Provided is a high-performance surface acoustic wave device composite substrate which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joining interface between a piezoelectric crystal film and a support substrate is reduced. A surface acoustic wave device composite substrate is configured by including a piezoelectric single crystal substrate and a support substrate, and characterized in that the piezoelectric single crystal substrate and/or the support substrate has an uneven structure at the joining interface between the piezoelectric single crystal substrate and the support substrate, and the ratio between the average length RSm of elements in the cross-sectional curve of the uneven structure and the wavelength λ of a surface acoustic wave when the substrate is used as a surface acoustic wave device is 0.2-7.0.

JP7374629	Acoustic wave devices, filters and multiplexers
JPH02179018	SURFACE MOUNT TYPE SURFACE ACOUSTIC WAVE DEVICE

AKIYAMA SHOJI (JP)
TANNO MASAYUKI (JP)
SHIRAI SHOZO (JP)

PCT/JP2017/024490

January 25, 2018

July 04, 2017

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SHINETSU CHEMICAL CO (JP)

H03H9/25; H03H3/08

WO2014027538A1

2014-02-20

JP2015050653A	2015-03-16
JPH0563500A	1993-03-12
JP2001053579A	2001-02-23
JPH06326553A	1994-11-25
JPS5099249A	1975-08-06
JP2015228637A	2015-12-17

"Temperature Compensation Technology for SAW-Duplexer Used in RF Front End of Smartphone", 8 November 2012, DEMPA SHIMBUN HIGH TECHNOLOGY
2010: "A study on Temperature-Compensated Hybrid Substrates for Surface Acoustic Wave Filters", IEEE INTERNATIONAL ULTRASONIC SYMPOSIUM PROCEEDINGS, pages 637 - 640
See also references of EP 3490146A4

ORISAKA Shigeki (JP)

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