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Title:
METHOD FOR MANUFACTURING TFT SUBSTRATE, AND TFT SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/232784
Kind Code:
A1
Abstract:
Provided in the present invention are a method for manufacturing a TFT substrate, and a TFT substrate. According to the method for manufacturing a TFT substrate of the present invention, UV light irradiation is performed on a metal oxide semiconductor layer with a gate electrode acting as a shielding layer, so that parts, irradiated by UV light, of the metal oxide semiconductor layer are subjected to conduction to form a source electrode, a drain electrode and a pixel electrode, and a part, shielded by the gate electrode, of the metal oxide semiconductor layer still retains semiconductor properties to form a semiconductor channel. In the present invention, the alignment of the source electrode and the gate electrode and the alignment of the drain electrode and the gate electrode are implemented by means of gate electrode self-alignment and the metal oxide semiconductor layer conduction process, so that an overlapping region of the source electrode and the gate electrode and an overlapping region of the drain electrode and the gate electrode can be effectively controlled, such that parasitic capacitance is reduced, and the display quality is improved. Moreover, the manufacturing method is simple, thereby improving production efficiency.

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Inventors:
WEI XIANWANG (CN)
Application Number:
PCT/CN2019/091722
Publication Date:
November 26, 2020
Filing Date:
June 18, 2019
Export Citation:
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Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/44; H01L21/34; H01L21/84; H01L27/12; H01L29/417; H01L29/786
Foreign References:
CN107275412A2017-10-20
US20090224250A12009-09-10
CN107204377A2017-09-26
CN100437980C2008-11-26
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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