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Title:
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/074537
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a thin film transistor device, which comprises: a step in which the edge portions of crystalline semiconductor films (13 (13a and 13b)) are each provided with an inclined portion (51): a step in which a resist film (15) is formed so that the inclined portion (51) of the crystalline semiconductor film (13a) is exposed therefrom and the crystalline semiconductor film (13b) is entirely covered by the resist film (15); a step in which a part of the resist film (15) formed on the crystalline semiconductor film (13a) is half exposed; a step in which a p-type impurity is introduced only into the inclined portion (51) of the crystalline semiconductor film (13a); a step in which the part of the resist film (15) formed on the crystalline semiconductor film (13a) is removed by ashing; and a step in which a p-type impurity is introduced into the entirety of the crystalline semiconductor film (13a).

Inventors:
MORI HIROKI
SAITOH MASAKI
TOMITA TAKUMI
Application Number:
PCT/JP2010/072387
Publication Date:
June 23, 2011
Filing Date:
December 13, 2010
Export Citation:
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Assignee:
SHARP KK (JP)
MORI HIROKI
SAITOH MASAKI
TOMITA TAKUMI
International Classes:
G02F1/1368; H01L29/786; G09F9/30; H01L21/336; H01L21/8238; H01L27/08; H01L27/092
Foreign References:
JP2008166597A2008-07-17
JPH09293868A1997-11-11
JP2003258262A2003-09-12
JPH08186265A1996-07-16
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation Hara [Kenzo] international patent firm (JP)
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