Title:
METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE, THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED BY SAME, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/124281
Kind Code:
A1
Abstract:
A method for manufacturing a thin-film transistor substrate, comprising: a step of forming a gate electrode (11aa) on an insulating substrate (10a); a step of forming a first gate insulating layer (12a) comprising a silicon nitride film so as to cover the gate electrode (11a), and subsequently supplying an oxygen radical to a front surface of the first gate insulating layer (12a) to conduct a surface treatment; a step of forming a second gate insulating layer (12b) comprising a silicon oxide film on the first gate insulating layer (12a); and a step of forming an oxide semiconductor layer (12a) on the second gate insulating layer (12b).
Inventors:
ODA AKIHIRO
MATSUKIZONO HIROSHI
MATSUKIZONO HIROSHI
Application Number:
PCT/JP2012/001468
Publication Date:
September 20, 2012
Filing Date:
March 02, 2012
Export Citation:
Assignee:
SHARP KK (JP)
ODA AKIHIRO
MATSUKIZONO HIROSHI
ODA AKIHIRO
MATSUKIZONO HIROSHI
International Classes:
H01L29/786; G02F1/1368; H01L21/336
Foreign References:
| JP2010182818A | 2010-08-19 | |||
| JP2003086808A | 2003-03-20 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
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Claims: