Title:
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2013/190992
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for manufacturing a thin film transistor having high mobility by forming a transparent amorphous oxide semiconductor layer by a liquid phase method and carrying out an annealing treatment at relatively low temperature; and a thin film transistor which is manufactured by this method.
A method for manufacturing a thin film transistor according to the present invention comprises: a step for forming a gate electrode; a step for forming a gate insulating film that is in contact with the gate electrode; and a step for forming an oxide semiconductor layer by a liquid phase method, said oxide semiconductor layer being arranged to face the gate electrode with the gate insulating film therebetween and having a first region that is represented by In(a)Ga(b)Zn(c)O(d) (wherein a ≥ 0, b ≥ 0, c ≥ 0, a + b + c = 1 and d > 0) and satisfies b ≤ 1/3 and b ≥ -10a/7 + 1 and a second region that is represented by In(e)Ga(f)Zn(g)O(h) (wherein e ≥ 0, f ≥ 0, g ≥ 0, e + f > 0 and h > 0) and positioned further from the gate electrode than the first region.
Inventors:
ONO MASASHI (JP)
TAKATA MASAHIRO (JP)
IDEUE TOSHIYA (JP)
TANAKA ATSUSHI (JP)
SUZUKI MASAYUKI (JP)
TAKATA MASAHIRO (JP)
IDEUE TOSHIYA (JP)
TANAKA ATSUSHI (JP)
SUZUKI MASAYUKI (JP)
Application Number:
PCT/JP2013/065489
Publication Date:
December 27, 2013
Filing Date:
June 04, 2013
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L29/786; G01T7/00; G02F1/1368; G09F9/30; H01L21/336; H01L27/144; H01L27/146
Domestic Patent References:
| WO2011135514A2 | 2011-11-03 |
Foreign References:
| JP2010074061A | 2010-04-02 | |||
| JP2010263103A | 2010-11-18 | |||
| JP2010021333A | 2010-01-28 | |||
| JP2012059860A | 2012-03-22 | |||
| JP2010199307A | 2010-09-09 |
Attorney, Agent or Firm:
NAKAJIMA, Jun et al. (JP)
Nakajima 淳 (JP)
Nakajima 淳 (JP)
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