Title:
METHOD FOR MANUFACTURING THREE-DIMENSIONAL ELECTRONIC DEVICE MADE OR ANISOTROPIC MATERIAL TO BE PROCESSED AND ITS MANUFACTURING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2004/097951
Kind Code:
A1
Abstract:
A method and apparatus for manufacturing a three-dimensional electronic device made of a high-temperature superconductor capable of manufacturing a single electron tunnel device and an intrinsic Josephson device having a layered structure specific to high-temperature superconductor by side-face etching and by small area etching without any restriction on the surface properties of the single crystal and thin film. While a substrate holder is being rotated about 360° (at least about 90°), a single crystal and a thin film on the substrate is etched from side by a focused ion beam, allowing a device to be manufactured. After forming a bridge of a junction length by a focused ion beam etching of the single crystal and thin film from above, the specimen is rotated about 90° (270°), and multilayard current path layer is formed by side-face etching. Further, the junction length is precisely controlled by measuring the current path length of the image on the screen.
Inventors:
YAMASHITA TSUTOMU (JP)
KIM SANG-JAE (JP)
KIM SANG-JAE (JP)
Application Number:
PCT/JP2000/000280
Publication Date:
November 11, 2004
Filing Date:
January 21, 2000
Export Citation:
Assignee:
YAMASHITA TSUTOMU (JP)
KIM SANG-JAE (JP)
KIM SANG-JAE (JP)
International Classes:
H01L21/3065; H01L21/302; H01L39/24; (IPC1-7): H01L39/24
Foreign References:
| JPH07235700A | 1995-09-05 | |||
| JPH0964643A | 1997-03-07 | |||
| JPH08228029A | 1996-09-03 | |||
| US5677011A | 1997-10-14 | |||
| JPH10111223A | 1998-04-28 | |||
| JPH09259810A | 1997-10-03 | |||
| JPH08254852A | 1996-10-01 |
Attorney, Agent or Firm:
Shimizu, Mamoru (7-10 Kanda-mitoshiro-ch, Chiyoda-ku Tokyo, JP)
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