Title:
METHOD FOR MANUFACTURING THREE-DIMENSIONAL NAND FLASH MEMORY ARRAY
Document Type and Number:
WIPO Patent Application WO/2024/005617
Kind Code:
A1
Abstract:
According to one embodiment of the present invention, a method for manufacturing a three-dimensional NAND flash memory array comprising a vertical NAND channel in which polysilicon is grown on a substrate may comprise: a metal film formation step of injecting a metal, thereby forming a metal film along a side wall of the polysilicon; a crystal phase growth step of irradiating same with microwaves, thereby growing crystalline silicon between the metal and the polysilicon; and a crystal phase transfer step of irradiating same with microwaves, thereby transferring the crystalline silicon toward the bottom surface of the vertical NAND channel.
Inventors:
HWANG HYUNSANG (KR)
Application Number:
PCT/KR2023/009340
Publication Date:
January 04, 2024
Filing Date:
July 03, 2023
Export Citation:
Assignee:
HPSP CO LTD (KR)
POSTECH RES & BUSINESS DEV FOUND (KR)
POSTECH RES & BUSINESS DEV FOUND (KR)
International Classes:
H10B43/27; C30B1/02; C30B30/02; H10B41/27; H10B41/35; H10B43/35
Foreign References:
| KR20150025224A | 2015-03-10 | |||
| KR20050078392A | 2005-08-05 | |||
| KR20150137004A | 2015-12-08 | |||
| US20020139979A1 | 2002-10-03 | |||
| US20140241050A1 | 2014-08-28 |
Attorney, Agent or Firm:
DAE-A INTELLECTUAL PROPERTY CONSULTING (KR)
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