Title:
METHOD FOR MANUFACTURING TRANSISTOR ACCORDING TO SELECTIVE PRINTING OF DOPANT
Document Type and Number:
WIPO Patent Application WO/2016/010332
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a transistor according to selective printing of a dopant. The present invention provides a transistor manufacturing method characterized in that a semiconductor layer is formed on a substrate, in order to manufacture a transistor, a dopant is formed on the semiconductor layer, and formation of the dopant is conducted by selectively printing an n-type dopant or a p-type dopant using inkjet printing.
Inventors:
NOH YONG YOUNG (KR)
Application Number:
PCT/KR2015/007283
Publication Date:
January 21, 2016
Filing Date:
July 14, 2015
Export Citation:
Assignee:
UNIV DONGGUK IND ACAD COOP (KR)
International Classes:
H01L27/32; H01L51/56
Foreign References:
| JPH11251259A | 1999-09-17 | |||
| KR20120071625A | 2012-07-03 | |||
| KR20120100241A | 2012-09-12 | |||
| KR101218925B1 | 2013-01-21 |
Other References:
DELL' ERBA, GIORGIO ET AL.: "Organic Integrated Circuits for Information Storage Based on Ambipolar Polymers and Charge Injection Engineering", APPLIED PHYSICS LETTERS, vol. 104, no. 15, April 2014 (2014-04-01), pages 153303 - 1 - 153303-5, XP012184723, DOI: doi:10.1063/1.4871715
Attorney, Agent or Firm:
BACK, Doojin et al. (KR)
백두진 (KR)
백두진 (KR)
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