Title:
METHOD FOR MEASURING CURRENT-VOLTAGE CHARACTERISTIC
Document Type and Number:
WIPO Patent Application WO/2019/146460
Kind Code:
A1
Abstract:
The present invention provides a method for measuring a current-voltage characteristic representing a relationship between a drain current and a drain-source voltage of a first transistor, the method including: a first step of setting the drain current and a drain-source voltage using a voltage source and a current source connected in series to the first transistor, and a rectifying element connected in parallel, with the orientation thereof opposite to that of an inductive load serving as the current source; a second step of measuring a gate-source voltage and a gate current of the first transistor in a switching transient state; and a third step of using the measurement results of the gate-source voltage and the gate current to calculate a voltage to be applied to a gate oxide film of the first transistor, and using the calculated result to acquire the current-voltage characteristic of the first transistor. In the first step, an excitation current is shunted through a path that does not pass through the first transistor, during an excitation period in which the excitation current flows through the inductive load.
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Inventors:
NAKAMURA YOHEI (JP)
YANAGI TATSUYA (JP)
YANAGI TATSUYA (JP)
Application Number:
PCT/JP2019/001026
Publication Date:
August 01, 2019
Filing Date:
January 16, 2019
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
G01R31/26
Foreign References:
| JP2017181178A | 2017-10-05 | |||
| JP2008164364A | 2008-07-17 | |||
| JP2016164524A | 2016-09-08 | |||
| JP2013108802A | 2013-06-06 | |||
| JP2007166103A | 2007-06-28 | |||
| US20070040571A1 | 2007-02-22 | |||
| US20070182435A1 | 2007-08-09 | |||
| CN105974293A | 2016-09-28 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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