METHOD FOR MEASURING FILM THICKNESS DISTRIBUTION OF WAFER WITH THIN FILM

WIPO Patent Application WO/2017/122248

A1

In the present invention, a profile P1 indicating the wavelength dependence of the reflectance of a wafer with thin film and a profile P21 indicating the wavelength dependence of the reflectance of a wafer with thin film having a second thin film that is t [nm] thicker (or thinner) than a set film thickness T2 for the second thin film are determined through simulation. A wavelength λ1 at which the difference between P1 and P21 is zero is determined. Light of the wavelength λ1 is irradiated onto a wafer with thin film, and a film thickness distribution for a first thin film expressed in relative values is calculated through the measurement of the reflected light intensity. A film thickness distribution for the first thin film expressed in absolute values is calculated from absolute film thickness values measured using a film thickness measurement device capable of measuring the absolute values of the first thin film and the film thickness distribution for the first thin film expressed in relative values. As a result, for a wafer with thin film having a first thin film and second thin film on a substrate, film thickness distributions for the first thin film and/or second thin film can be measured as film thickness distributions expressed using absolute values with a high spatial resolution, without the distributions being influenced by each other, and with a high degree of accuracy.

KUWABARA SUSUMU (JP)

PCT/JP2016/005126

July 20, 2017

December 14, 2016

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SHINETSU HANDOTAI KK (JP)

G01B11/06; H01L21/66

JP2013137205A	2013-07-11
JP2011249621A	2011-12-08
JPH1076464A	1998-03-24
JP2016114506A	2016-06-23

YOSHIMIYA, Mikio et al. (JP)

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