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Title:
METHOD FOR MEASURING TEMPERATURE USING PYROELECTRIC TEMPERATURE SENSOR
Document Type and Number:
WIPO Patent Application WO/2011/111309
Kind Code:
A1
Abstract:
A series transistor structure is formed by a semiconductor layer (9) and three upper electrodes (11, 13, 15). The semiconductor layer (9) is of a structure which is in contact with a ferroelectric layer (7), and when the direction of polarization is vertically changed with respect to the two transistors, the polarities of the temperature characteristics of two channels can be inverted to each other.

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Inventors:
UEDA MICHIHITO
TANAKA HIROYUKI
KANEKO YUKIHIRO
FUJII EIJI
Application Number:
PCT/JP2011/000888
Publication Date:
September 15, 2011
Filing Date:
February 17, 2011
Export Citation:
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Assignee:
PANASONIC CORP (JP)
UEDA MICHIHITO
TANAKA HIROYUKI
KANEKO YUKIHIRO
FUJII EIJI
International Classes:
G01K7/00; H01L37/02
Foreign References:
JPH02137268A1990-05-25
JP2006203009A2006-08-03
JPH10318849A1998-12-04
JPS5911841B21984-03-19
Attorney, Agent or Firm:
OKUDA, SEIJI (JP)
Seiji Okuda (JP)
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