Title:
METHOD FOR OPERATING PHASE CHANGE MEMORY UNIT, AND RELATED DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/093387
Kind Code:
A1
Abstract:
A method for operating a phase change memory unit, and a related device. The phase change memory unit comprises a first electrode (101), a phase change layer (103) and a second electrode (102). The second electrode (102) is grounded. The method is characterized in that it comprises: sequentially applying a first pulse and a second pulse to the first electrode (101), wherein the first pulse and the second pulse are respectively used to adjust the state of a resistance value of the phase change memory unit, and the polarity of the first pulse is opposite to that of the second pulse. The method can reduce the occurrence of drift of a resistance value of a phase-change memory unit, thereby improving the data retention capability of the phase change memory unit.
Inventors:
HE QIANG (CN)
WANG TAO (CN)
DONG GUANGCHAO (CN)
LI HUAN (CN)
WANG TAO (CN)
DONG GUANGCHAO (CN)
LI HUAN (CN)
Application Number:
PCT/CN2018/114885
Publication Date:
May 14, 2020
Filing Date:
November 09, 2018
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C16/02
Foreign References:
| CN102057438A | 2011-05-11 | |||
| CN102057438A | 2011-05-11 | |||
| CN1892889A | 2007-01-10 | |||
| CN104966779A | 2015-10-07 | |||
| CN101777380A | 2010-07-14 | |||
| US20180102149A1 | 2018-04-12 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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